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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU903 DESCRIPTION With TO-3PN package High voltage High speed switching APPLICATIONS For color TV horizontal deflection circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg Collector-base voltage PARAMETER CONDITIONS Open emitter Open base Collector-emitter voltage HAN INC Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature SEM GE TC=25ae Open collector OND IC TOR UC VALUE 1350 550 7 6 125 150 -65~150 ae ae UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction case MAX 1.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU903 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0; IE=10mA; IC=0; IC=3.2A;IB=0.8A IC=3.2A;IB=0.8A VCB=1300V;IE=0 VEB=5V;IC=0 IC=1.5A ; VCE=5V 8 MIN 550 7 2.0 1.3 1.0 0.1 TYP. MAX UNIT V V V V mA mA SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE HAN INC SEM GE OND IC TOR UC 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU903 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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